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| Shantou Huashan Electronic Devices Co.,Ltd. HBT139F-600 INSULATED TYPE TRIAC (TO-220F PACKAGE) Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=16A) * High Commutation dv/dt *Isolation VoltageVISO=1500V AC General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. TO-220F 1 2 Absolute Maximum RatingsTa=25 3 Tstg----Storage Temperature........................................................................... -40~150 Tj ----Operating Junction Temperature ............................................................ -40~125 PGM----Peak Gate Power Dissipation........................................................................... 5W VDRM----Repetitive Peak Off-State Voltage.................................................................. 600V ITRMS----R.M.S On-State CurrentTc=41......................................................... 16A VGM----Peak Gate Voltage....................................................................................... 10V IGM----Peak Gate Current....................................................................................... 2.0A ITSM----Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ..................... 145/155A R.M.S A.C.1minute .............................................1500V VISO----Isolation Breakdown Voltage Electrical CharacteristicsTa=25 Symbol IDRM VTM I+GT1 I-GT1 I-GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) Items Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Current Gate Trigger Current Gate Trigger Current Gate Trigger Voltage Gate Trigger Voltage Gate Trigger Voltage Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance 0.2 10 20 3.5 Min Max 2.0 1.6 25 25 25 1.5 1.5 1.5 Unit mA V mA mA mA V V V V V/S mA /W Junction to case Conditions VD=VDRM,Single Phase,Half Wave, TJ=125 IT=20A, Inst. Measurement VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm TJ=125,VD=1/2VDRM TJ=125,VD=2/3VDRM (di/dt)c=-6A/ms Shantou Huashan Electronic Devices Co.,Ltd. HBT139F-600 Performance Curves Shantou Huashan Electronic Devices Co.,Ltd. HBT139F-600 |
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